The battle for nanometer node supremacy continues as Samsung has begun manufacturing with the world’s first 3nm node process. TSMC and Samsung have been trading blows for king of the semiconductor industry and now Samsung has ante’d up, or down, to the next level.
Vice Chairman Lee Jae-yong announced their success in producing this node on January 2nd, 2020. This new node uses GAA or Gate-All-Around technology instead of FinFET transistors. GAA allows 4 gates on channel vs 3 gates on FinFET to improve performance and control.
- Reduced size of 35%
- 50% less power used
- 30% performance increase