Memory and storage solutions giant Micron announced today that it has successfully delivered the industry’s first 1α (1-alpha) DRAM technology, a new, cutting-edge process that is said to deliver major improvements in bit density, power, and performance. According to a press release shared by the company, the advanced node has enabled the development of the industry’s lowest-power mobile DRAM, offering an impressive 15 percent improvement in power savings. Volume production of 1α-based DDR4 memory for compute customers and Crucial consumer PC DRAM products has already begun.
“This 1α node achievement confirms Micron’s excellence in DRAM and is a direct result of Micron’s relentless commitment to cutting-edge design and technology,” said Scott DeBoer, executive vice president of technology and products at Micron. “With a 40% improvement in memory density over our previous 1z DRAM node, this advancement will create a solid foundation for future product and memory innovation.”
“Our new 1α DRAM technology will enable the industry’s lowest-power mobile DRAM as well as bring the benefits of our DRAM portfolio to data center, client, consumer, industrial and automotive customers,” said Sumit Sadana, executive vice president and chief business officer at Micron. “With our industry leadership in both DRAM and NAND technology, Micron is in an excellent position to leverage the growth in memory and storage, which are expected to be the fastest growing segments in the semiconductor industry over the next decade.”
Micron also shared a video with vice president of DRAM Process Integration, Thy Tran, who provides additional insight into the company’s new advanced DRAM process technology and how her team managed to bring it to high-volume manufacturing in record time.
“If you’ve ever wondered just how small cutting-edge memory cells are and how they’re made, I suggest you watch,” the author wrote. “Spoiler alert: It’s very, very complicated and boggles my mind that humans can build anything so intricate, not just once, but more than a trillion times on every wafer!”