The 990 EVO Plus, a new M.2 2280 PCIe 4.0 and Gen 5.0 NVMe SSD that delivers sequential read/write speeds of up to 7,250/6,300 MB/s, is now available in 1 TB, 2 TB, and 4 TB capacities, Samsung has announced. Those speeds would make the 990 EVO Plus up to 50% faster than the original 990 EVO, according to a press release that Samsung shared today, which also notes what is said to be an industry-leading random read speed of 1,050K IOPS and 1,400K IOPS for random write for the 4 TB model. Samsung’s specifications for the 990 EVO Plus can be found below.
The 990 EVO Plus is backed by decades of pioneering semiconductor technology with proven reliability from Samsung. It offers sequential read speeds up to 7,250 megabytes-per-second (MB/s) and write speeds up to 6,300 MB/s, up to 50% faster than the previous 990 EVO. This performance boost is enabled by the latest Samsung 8th generation V-NAND technology and 5-nanometer (nm) controller, while an innovative nickel-coated heat shield minimizes overheating, delivering 73% greater power efficiency over the 990 EVO.